Charge transfer enabled by the p-doping of WSe₂ for 2D material-based printable electronics

Here, we report the fabrication of high-performance printable WSe2 transistors via doping p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based electronics.